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銻化鎵
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| 型號︰ | 锑化镓 |
| 品牌︰ | 特博 |
| 原產地︰ | 中國 |
| 單價︰ | CNY ¥ 1 / 片 |
| 最少訂量︰ | 1 片 |
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單晶
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摻雜
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導電
類型
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載流子濃度cm-3
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位錯密
度cm-2
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生長方法
尺寸
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標準
基片
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GaSb
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None
None high R
Zn
Te
Te high R
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P
P-
P+
N
N
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1~2×1017
1~5×1016
1~5×1018
2~6×1017
1~5×1016
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＜103
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LEC
Φ3″
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Φ3″×0.5
Φ2″×0.5
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Typical Electrical Properties
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Dopant available
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Te
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Zn
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Undoped
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Type of conductivity
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N
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P
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P
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Concentration ( cm -3 )
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1E17 - 5E18
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2E17 - 4E18
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x
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Hall Mobility ( cm 2 / v.s. )
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2500 - 3500
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200 - 500
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600 - 700
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Standard Specifications
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Growth method
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LEC
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Diameter ( mm )
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50.8
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Thickness ( um )
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500 +/-25 um
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Conductivity
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Semi-conducting
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Orientation
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<100> , <111> , <110>
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Off orientation
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From 2° to 10° off
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Flat options
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EJ or US SEMI. Std .
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Surface finish
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One side or two sides polished
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EPD ( cm-2)
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< 1000 or < 10000
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Grade
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Epi polished grade , mechanical grade
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Package method
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Single wafer container with outer foil bag
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產品圖片
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