特博科技有限公司是英國ICEMOSTECH公司在中國的 代理，高品質的SOI wafer和SuperJunction MOSFET是ICEMOS的主營產品，憑借15年的製造經驗ICEMOS在世界範圍內有眾多的客戶群體，分別在歐洲，美國，日本、韓國和中東設有代理商。
SOI wafer尺寸: 4”(100mm）, 5”（125mm）, 6”（150mm）and 8"（200mm）
SOI Spec. 規格：
1- Bonded SOI wafer (絕緣硅上鍵合硅片）
For 4”(100mm）, 5”（125mm）, 6”（150mm）
---- Handle wafer minimum 300um maximum 1000um,
---- Buried Oxide, minimum 0.1 um, maximum 4 um,
---- Device layer minimum 2 um, max 500 um.
For 8"（200mm）
---- Handle thickness minimum 500um and maximum 675um,
---- Buried Oxide minimum 0.1 um, maximum 4 um,
---- Device layer minimum 5 um, maximum 500 um.
2- Si-Si direct wafer bonding (replacement for epi) 硅-硅直接鍵合，可替代外延片
100mm, 125mm, 150mm and 200mm, thickness as specified above.
3- Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
and finally Through Silicon Via (TSV)
---- Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer
---- Multiple SOI 2 or 3 or more layers of SOI designed around your process
---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
4- SOI + Trench & Refill
Features
- Significant die shrink compared to conventional dielectric isolation
(DI) or junction isolation
- Bulk quality top silicon layer
- Total device-to-device isolation
- Lower substrate capacitance than bulk
- Fully flexible specification on SOI, Trench and refill parameters
5- Superjunction MOSFET
為了一些客戶的緊急需求，英國工廠存有部分現貨，歡迎您來電咨詢更詳細的產品信息！
