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soi绝缘硅片

  • soi绝缘硅片
  • soi绝缘硅片
型号︰硅片
品牌︰特博
原产地︰中国
单价︰CNY ¥ 1 / 片
最少订量︰1 片

 共有 20 相关信息  
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产品描述

 

特博科技有限公司是英国ICEMOSTECH公司在中国的 代理,高品质的SOI waferSuperJunction MOSFETICEMOS的主营产品,凭借15年的制造经验ICEMOS在世界范围内有众多的客户群体,分别在欧洲,美国,日本、韩国和中东设有代理商。

 

 

SOI wafer尺寸: 4”(100mm, 5”125mm, 6”150mmand  8"200mm

SOI Spec. 规格:

     1-    Bonded SOI wafer (绝缘硅上键合硅片)

                          For 4”(100mm, 5”125mm, 6”150mm

                     ---- Handle wafer minimum 300um maximum 1000um,

                     ---- Buried Oxide, minimum 0.1 um, maximum 4 um,

                     ---- Device layer minimum 2 um, max 500 um.

                         

                          For 8"200mm

                     ---- Handle thickness minimum 500um and maximum 675um,

                     ---- Buried Oxide minimum 0.1 um, maximum 4 um,

                     ---- Device layer minimum 5 um, maximum 500 um.

 

2-       Si-Si direct wafer bonding (replacement for epi) -硅直接键合可替代外延片

 

      100mm, 125mm, 150mm and 200mm, thickness as specified above.

 

3-       Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),

      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)

      and finally Through Silicon Via (TSV)   

 

 ----  Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer

 ---- Multiple SOI 2 or 3 or more layers of SOI designed around your process

 ---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated

 

     4-     SOI + Trench & Refill

  

   Features

  • Significant die shrink compared to conventional dielectric isolation

    (DI) or junction isolation

  • Bulk quality top silicon layer
  • Total device-to-device isolation
  • Lower substrate capacitance than bulk
  • Fully flexible specification on SOI, Trench and refill parameters

5-   Superjunction MOSFET

 

    为了一些客户的紧急需求,英国工厂存有部分现货,欢迎您来电咨询更详细的产品信息!

 

产品图片



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