銻化鎵

銻化鎵

型號︰锑化镓

品牌︰特博

原產地︰中國

單價︰CNY ¥ 1 / 片

最少訂量︰1 片

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產品描述

                                                      

                                               

 

 

單晶

摻雜

導電
類型

載流子濃度cm-3

位錯密
度cm-2

生長方法
尺寸

標準
基片

GaSb

None
None high R
Zn
Te
Te high R

P
P-
P+
N
N

1~2×1017
1~5
×1016
1~5
×1018
2~6×1017
1~5×1016

<103

LEC
Φ3

Φ3″×0.5
Φ2″×0.5

 

Typical Electrical Properties

Dopant available

Te

Zn

Undoped

Type of conductivity

N

P

P

Concentration ( cm -3 )

1E17 - 5E18

2E17 - 4E18

x

Hall Mobility ( cm 2 / v.s. ) 

2500 - 3500

200 - 500

600 - 700

 

 

Standard Specifications

Growth method

LEC

Diameter ( mm )

50.8

Thickness ( um )

500 +/-25 um

Conductivity

Semi-conducting

Orientation

<100> , <111> , <110>

Off orientation

From 2° to 10° off

Flat options

EJ or US SEMI. Std .

Surface finish

One side or two sides polished

EPD ( cm-2)

< 1000 or < 10000

Grade

Epi polished grade , mechanical grade

Package method

Single wafer container with outer foil bag

 

   

 

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